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Quasimonolithic hybridization of multiple quantum well electroabsorption modulator/detector arrays with silicon VLSI

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3 Author(s)
Callahan, J.J. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Martin, K.P. ; Drabik, T.J.

We report a fully inorganic technique for hybridizing MQW device arrays, that yields quasimonolithic levels of thermal conductivity, mechanical strength, and electrical parasitics, and permits a wide range of further postprocessing operations. We have demonstrated Au-Sn-based quasimonolithic hybridization to silicon VLSI of MQW electroabsorption modulators and detectors having a sophisticated vertical structure. The planarity of the process facilitates subsequent vacuum-deposition steps; the vertical device structure allows minimization of the footprint and parasitic capacitance; the chosen bond metallurgy is robust under subsequent high-temperature packaging operations. We believe that our technique offers valuable flexibility in the overall physical design of low-level optical interconnections for VLSI

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LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting  (Volume:2 )

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