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High power 3-12 μm laser diodes, recent advances and future trend

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1 Author(s)
Razeghi, M. ; Dept. of Electr. Eng., Northwestern Univ., Evanston, IL, USA

High performance interband laser structures emitting between 3 to 5 μm based on the InAsSbP material system have been developed. Lasers based on interband transitions offer advantages of high efficiencies and high output powers while requiring a low threshold power. Currently, three types of interband laser structures are considered as promising high power high temperature lasers: InAs-InAsSb-AlAsSb double heterostructures (DH), InAs-InAsSb-InAsP and InAs-InAsSb strained-layer superlattices (SLS)

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LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting  (Volume:2 )

Date of Conference: