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1.3 μm low threshold Al-oxide confined inner stripe (ACIS) lasers and ACIS laser array

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3 Author(s)
Iwai, N. ; R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan ; Mukaihara, T. ; Kasukawa, A.

Novel long wavelength in-plane lasers using selective oxidation of Al-containing layer have been reviewed. Both highly strained AlAs and lattice-matched AlInAs layers are used for oxidation. Newly developed ACIS (Al-oxide Confined Inner Stripe) lasers are one of the promising candidates for high performance, low-cost light sources

Published in:

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting  (Volume:2 )

Date of Conference:

1999