By Topic

1.3 μm low threshold Al-oxide confined inner stripe (ACIS) lasers and ACIS laser array

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Iwai, N. ; R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan ; Mukaihara, T. ; Kasukawa, A.

Novel long wavelength in-plane lasers using selective oxidation of Al-containing layer have been reviewed. Both highly strained AlAs and lattice-matched AlInAs layers are used for oxidation. Newly developed ACIS (Al-oxide Confined Inner Stripe) lasers are one of the promising candidates for high performance, low-cost light sources

Published in:

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting  (Volume:2 )

Date of Conference: