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Wafer surface treatment for bonding GaInAsP and magnetooptic garnet

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7 Author(s)
Mizumoto, T. ; Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan ; Yokoi, Hideki ; Shimizu, M. ; Waniishi, T.
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GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. Wafer direct bonding was successfully achieved between O2 plasma activated GaInAsP and garnet crystals. This technique has been applied with the aim of integrating a laser diode and an optical isolator

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LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting  (Volume:2 )

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