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Ultralow threshold strained InGaAs-GaAs quantum well lasers by impurity-induced disordering

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4 Author(s)
Zou, W.X. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Merz, J.L. ; Fu, R.J. ; Hong, C.S.

Stripe-geometry strained InGaAs-GaAs quantum well lasers were fabricated by impurity induced disordering. Threshold currents as low as 2.2 mA at room temperature continuous operation (RT CW) were obtained for uncoated lasers having 1.2 mu m wide, 215 mu m long active stripes. The authors believe that this ultralow threshold is mainly due to the very small active stripe width and the excellent electrical confinement of the laser.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 14 )