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Oxide-apertured photodetector integrated on vertical cavity surface emitting laser

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4 Author(s)
I. Y. Han ; Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea ; J. H. Ser ; H. Y. Ryu ; Y. H. Lee

The authors have designed and fabricated oxide-apertured photodetectors integrated with vertical cavity surface emitting lasers (VCSELs). The photocurrent originating from spontaneous emission is suppressed by more than a factor of 10 in this integrated photodetector owing to the use of nonradiative recombination at the GaAs/oxide interface. In addition, the unavoidable internal loss from the detector is minimised by locating the GaAs detection layer as far as possible from the VCSEL cavity.

Published in:

Electronics Letters  (Volume:35 ,  Issue: 20 )