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Watt level GaAs PHEMT power amplifiers 26 GHz and 40 GHz for wireless applications

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4 Author(s)
Sovero, E.A. ; Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA ; Youngwoo Kwon ; Deakin, D.S. ; Hong, J.

The authors report on the design, fabrication and performance of 1 W amplifiers for 26 GHz and 40 GHz. The design approach uses standard MMIC elements: microstrip transmission lines, MIM capacitors, through-the-substrate vias for low impedance ground connection, two metal levels, air bridge crossovers and 75 μm substrates. The substrate material is grown by MBE, and for higher output power has double heterojunction channels. A Leica 10.6 electron beam lithography (EBL) machine defined the transistor gates. The gates are nominally 0.18 μm long. A plasma process that achieves excellent yield and reproducibility provides the gate recess

Published in:

Radio and Wireless Conference, 1999. RAWCON 99. 1999 IEEE

Date of Conference:

1999