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Porous silicon surface stabilisation by anodic oxidation for optoelectronic applications

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5 Author(s)
Kleps, I. ; Inst. of Microtechnol., Bucharest, Romania ; Angelescu, A. ; Miu, M. ; Ghita, M.
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Electrochemical anodic stabilisation of porous silicon (PS) samples of different porosities (60-85%) was realised. Anodic oxidation by cyclic voltammetry (CV) was used to emphasize the importance of PS post-preparation storage conditions and the influence of the PS morphology. The partially oxidised PS samples were investigated by IR spectroscopy and by electrical measurements

Published in:

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International  (Volume:2 )

Date of Conference:

Oct 1999