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Preliminary characterization of PbS/Si3N4/Si structure to be used in IR-field effect enhanced photoconductive devices (IR-FEEPD)

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5 Author(s)
Botila, T. ; Nat. Inst. if Mater. Phys., Bucharest, Romania ; Pentia, E. ; Pintilie, L. ; Tivarus, C.
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PbS thin films were deposited on the Si3N4/Si substrates. The electric properties of the sandwich structure, before and after PbS deposition, were investigated using C-V and I-V measurements. It was found that an anomalously high leakage current occurs through the structure after PbS deposition

Published in:

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International  (Volume:2 )

Date of Conference:

Oct 1999

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