Low temperature direct wafer bonding of silicon using a glass intermediate layer

Low temperature wafer bonding is desirable to bond processed wafers or dissimilar materials. The present paper proposes a low temperature silicon-to-silicon bonding process using a spin-on glass as intermediate layer. The interface bonding energy after annealing at 200/spl deg/C is about 2.3 J/m/sup 2/ and proved to be sufficient to allow further mechanical processing.