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Low temperature direct wafer bonding of silicon using a glass intermediate layer

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4 Author(s)
Dragoi, V. ; Max Planck of Microstruct. Phys., Halle, Germany ; Alexe, M. ; Reiche, M. ; Gosele, U.

Low temperature wafer bonding is desirable to bond processed wafers or dissimilar materials. The present paper proposes a low temperature silicon-to-silicon bonding process using a spin-on glass as intermediate layer. The interface bonding energy after annealing at 200°C is about 2.3 J/m2 and proved to be sufficient to allow further mechanical processing

Published in:

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International  (Volume:2 )

Date of Conference:

Oct 1999