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Effect of microwave radiation on the physicochemical properties of some semiconductor materials (GaAs, GaP, InP) and heterostructures, as well as on the parameters of surface-barrier diode structures

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10 Author(s)
Belyaev, A.A. ; Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine ; Belyaev, A.E. ; Ermolovich, I.B. ; Konakova, R.V.
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We have studied the effect of microwave (cm wavelength region) radiation on some semiconductor materials (GaAs, GaP, InP) and surface-barrier diode structures based on them. The changes in photoluminescence spectra of bulk semiconductor materials indicate at a modification of their impurity-defect composition. The changes in electrophysical parameters of the device structures studied seem to result from a structural-compositional modification of the interfaces due to microwave irradiation

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Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International  (Volume:1 )

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