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The modelling of the thermal field from a semiconductor structure using the finite elements method

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5 Author(s)
Schiopu, P. ; Politehnica Univ. Bucharest, Romania ; Degeratu, V. ; Lazar, G. ; Lakatos, E.
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This work treats the evacuation of heat generated in discrete power semiconductor devices in steady state. Using an analytical model based on Galerkin's method one can determine the thermal field configuration by means of finite elements which permit to obtain conclusions according with experimental results regarding the effect of junction depth and of contact surface and of the material (semiconductor) inhomogeneity upon the evacuation possibilities of heat

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Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International  (Volume:1 )

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