Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

The modelling of the thermal field from a semiconductor structure using the finite elements method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Schiopu, P. ; Politehnica Univ. Bucharest, Romania ; Degeratu, V. ; Lazar, G. ; Lakatos, E.
more authors

This work treats the evacuation of heat generated in discrete power semiconductor devices in steady state. Using an analytical model based on Galerkin's method one can determine the thermal field configuration by means of finite elements which permit to obtain conclusions according with experimental results regarding the effect of junction depth and of contact surface and of the material (semiconductor) inhomogeneity upon the evacuation possibilities of heat

Published in:

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International  (Volume:1 )

Date of Conference:

1999