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Browse Journals & Magazines > Electronics Letters ...> Volume:35 Issue:21 Help

Nonlinear variance model for analysis of effects of process-parameter fluctuations

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2 Author(s)
Rowlands, D. ; Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia ; Dimitrijev, S.

A nonlinear variance equation has been derived and applied to the threshold voltage of a 0.1 μm SOI MOS device. The equation enabled an analysis of the effects of process-parameter fluctuations to be made. The analysis showed that the effect of the nonlinear terms (15.48%) is more important than the effect of the mixed term (0.02%), and almost as important as the contribution of the second most dominant input-process parameter (21.98%). This illustrates the importance of the proposed nonlinear equation

Published in:
Electronics Letters  (Volume:35 ,  Issue: 21 )

Date of Publication: 14 Oct 1999

Page(s):
1836 - 1837
ISSN :
0013-5194
INSPEC Accession Number:
6411234
Digital Object Identifier :
10.1049/el:19991259
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
14 Oct 1999
Sponsored by :
Institution of Engineering and Technology

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