Referenced Items are not available for this document.
In this paper, we present an improved lumped-element equivalent circuit of silicon integrated inductors, which accurately takes into account parasitic effects and separately models the effect of metal and substrate losses. We describe an efficient procedure to deduce all the elements of the equivalent circuit from wideband, two-port measurements of the S-parameters of the inductor. The separate characterization of metal and substrate losses allows us to evaluate separately their contribution to the inductor's Q-factor. We also report the results of the characterization of some CMOS and BiCMOS integrated inductors designed to be included in radio frequency integrated circuits operating at 1.8 GHz
Published in:
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
(Volume:46
,
Issue:
12
)
Date of Publication: Dec 1999
- Page(s):
- 1453 - 1460
- ISSN :
- 1057-7130
- INSPEC Accession Number:
- 6466015
- Digital Object Identifier :
- 10.1109/82.809531
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec 1999
- Sponsored by :
- IEEE Circuits and Systems Society
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