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A 60-dB gain, 55-dB dynamic range, 10-Gb/s broad-band SiGe HBT limiting amplifier

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2 Author(s)
Yu. M. Greshishchev ; Nortel Networks, Ottawa, Ont., Canada ; P. Schvan

A limiting amplifier IC implemented in a silicon-germanium (SiGe) heterojunction bipolar transistor technology for low-cost 10-Gb/s applications is described. The IC employs 20 dB gain limiting cells, input overload protection, split analog-digital grounds, and on-chip isolation interface with transmission lines. A gain enhancement technique has been developed for a parallel-feedback limiting cell. The limiting amplifier sensitivity is less than 3.5 mVpp at BER=10-9 with 2-Vpp maximum input (55-dB dynamic range). The total gain is over 60 dB, and S21 bandwidth exceeds 15 GHz at 10-mVpp input. Parameters S11 and S22 are better than -10 dB in the 10-GHz frequency range. The AM to PM conversion is less than 5 ps across input dynamic range. The output differential voltage can be set from 0.2 to 2 Vpp with IC power dissipation from 250 mW to 1.1 W. The chip area is 1.2×2.6 mm2. A 10-Gb/s optical receiver, built with the packaged limiting amplifier, demonstrated -19.6-dBm sensitivity. The IC can be used in 10-Gb/s fiber-optic receivers requiring high sensitivity and wide input dynamic range

Published in:

IEEE Journal of Solid-State Circuits  (Volume:34 ,  Issue: 12 )