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A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHz

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4 Author(s)
W. Simburger ; Circuits Dept., Infineon Technol. AG, Munich, Germany ; H. -D. Wohlmuth ; P. Weger ; A. Heinz

This paper presents the circuit design and application of a monolithically integrated silicon radio-frequency power amplifier for 0.8-1 GHz. The chip is fabricated in a 25-GHz-fT silicon bipolar production technology (Siemens B6HF). A maximum output power of 5 W and maximum efficiency of 59% is achieved. The chip is operating from 2.5 to 4.5 V. The linear gain is 36 dB. The balanced two-stage circuit design is based fundamentally on three on-chip transformers. The driver stage and the output stage are connected in common-emitter configuration. The input signal can be applied balanced or single-ended if one input terminal is grounded. One transformer at the input acts as balun as well as input matching network. Two transformers acts as interstage matching network

Published in:

IEEE Journal of Solid-State Circuits  (Volume:34 ,  Issue: 12 )