Referenced Items are not available for this document.
We have developed a chemical mechanical polishing (CMP) process monitor which uses polishing vibration. The monitor enables us to accurately detect the polishing end point in copper (Cu) polishing, even when the conditions such as initial film thickness, slurry flow rate and polish rate are changed and when polishing multi-layered films. The processes and equipment can also be controlled as the monitor can detect abnormalities in the polishing conditions
Published in:
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Date of Conference: 1999
- Page(s):
- 187 - 190
- Meeting Date :
- 11 Oct 1999-13 Oct 1999
- ISSN :
- 1523-553X
- Print ISBN:
- 0-7803-5403-6
- INSPEC Accession Number:
- 6521074
- Conference Location :
- Santa Clara, CA
- Digital Object Identifier :
- 10.1109/ISSM.1999.808768
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
