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Layer yield estimation based on critical area and electrical defect monitor data

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3 Author(s)
Milor, L. ; AMD, Sunnyvale, CA, USA ; Hill, G. ; Yeng Peng

It is often desirable to forecast the random yield of each layer of new products. In this work we provide a yield forecasting methodology based on critical area, which goes beyond comparing die areas of products and accounts for layout density. This methodology forecasts the random yield loss per metal or poly layers by comparing the critical area of single layer defect monitors (DMs) to that of the product. In this paper, we discuss the design of DMs and sources of inaccuracy in product yield estimation based on DM data. In addition, we show how DMs can be useful in forecasting how the sizing of metal, poly, and local interconnect layers impacts random layer yield

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Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on

Date of Conference: