By Topic

Improving the efficiency and effectiveness of integrated circuit manufacturing technology development

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
S. K. Saha ; Technol. Simulation & Adv. Methodology, VLSI Technol., San Jose, CA, USA

Summary form only given. This paper presents a new integrated circuit manufacturing technology development (TD) paradigm for the semiconductor industry and compares it with the conventional approach. First of all, a typical IC manufacturing TD process is modeled by a sequence of tasks. These tasks are process design to generate process profiles (that is, distribution of impurity species into the silicon substrate), device design to characterize the process and generate device models and product design to achieve the target product specifications. The entire technology development cycle is divided into three major phases: (1) the generation of initial guess process recipes; (2) process optimization to generate process and device specifications; and (3) the evaluation of process manufacturability. It is shown that, in the conventional TD, these phases are achieved by an iterative method of processing wafers in a fab, performing electrical tests, comparing results with the target performance objectives, and randomly modifying the process parameters to meet the targets

Published in:

Management of Engineering and Technology, 1999. Technology and Innovation Management. PICMET '99. Portland International Conference on  (Volume:1 )

Date of Conference: