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A physics-based dynamic thermal impedance model for vertical bipolar transistors on SOI substrates

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3 Author(s)
Brodsky, J.S. ; Semicond. Group, Texas Instrum. Inc., Dallas, TX, USA ; Fox, R.M. ; Zweidinger, D.T.

A physics-based compact model for the thermal impedance of vertical bipolar transistors, fabricated with full dielectric isolation, is presented. The model compares favorably to both three dimensional (3-D) ANSYS(R) transient simulations and measurements. Using the software package Thermal Impedance Pre-Processor (TIPP), a multiple-pole circuit can be fitted to the thermal impedance model. The thermal equivalent circuit is used in conjunction with a modified version of SPICE to give efficient electrothermal simulations in the dc and transient regimes

Published in:

Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 12 )

Date of Publication:

Dec 1999

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