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A 74-GHz bandwidth InAlAs/InGaAs-InP HBT distributed amplifier with 13-dB gain

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5 Author(s)
Baeyens, Y. ; Bell Labs., Lucent Technol., Murray Hill, NJ, USA ; Pullela, R. ; Mattia, J.P. ; Tsai, H.-S.
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To date, distributed amplifiers based on heterojunction bipolar transistors (HBTs) have consistently shown lower gain-bandwidth products than their high electron mobility transistor (HEMT) counterparts. By using improved design techniques, we report a single-stage distributed amplifier with 13-dB gain and 74 GHz 3-dB bandwidth, based on InAlAs/InGaAs-InP HBTs with 160-GHz fT and 140-GHz fmax. The high gain and bandwidth results in a gain-bandwidth product of 330 GHz, which is, to our knowledge, the highest reported for HBT-based amplifiers and rivals that of the best InP HEMT distributed amplifiers with e-beam written gate of 0.1-0.15 μm dimension.

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:9 ,  Issue: 11 )