By Topic

Spectroscopy and imaging of InGaAs quantum dots using near-field optical probing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
A. Chavez-Pirson ; NTT Basic Res. Labs., Kanagawa, Japan ; H. Ando ; J. Temmyo

Summary form only given. The direct formation of semiconductor quantum dots by crystal growth is an exciting development for the study and application of zero-dimensional electronic structures. This approach, which is based upon island formation during heteroepitaxial growth of lattice mismatched semiconductor systems, produces a high spatial density (10/sup 10/ cm/sup 2/) of nanometer-scale dots. Here, we report on spatially- and spectrally-resolved luminescence from self-organized quantum dots formed from In/sub 0.4/Ga/sub 0.6/As/Al/sub 0.5/Ga/sub 0.5/As multilayers on a (311)B oriented GaAs substrate. We use a near-field optical probe to achieve high spatial resolution in optical measurements and to map the surface topography. We correlate topographic features with the underlying localized luminescence, and discuss the results in terms of the formation, environment, and structure of self-organized quantum dots on high index semiconductor substrates.

Published in:

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Date of Conference:

23-28 May 1992