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0.1 μm high performance metamorphic In0.32Al0.68 As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer

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6 Author(s)
Zaknoune, M. ; CNRS, Villeneuve d''Ascq, France ; Cordier, Y. ; Bollaert, S. ; Ferre, D.
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In0.32Al0.68As/In0.33Ga0.67 As HEMT structures were grown by molecular beam epitaxy (MBE) on GaAs substrates. An inverse step metamorphic buffer (IS) was used to reach a relaxation rate close to 98% and a mean cross-hatch of 2 nm. This structure, which has a gate length of 0.1 μm, exhibits a peak transconductance of 750 mS/mm and a current density of 650 mA/mm. A current gain cutoff frequency Ft of 160 GHz and a maximum oscillation frequency Fmax of 400 GHz were also obtained. These results clearly demonstrate the good electron transport properties due to the high relaxation rate and the good filtering of dislocations

Published in:

Electronics Letters  (Volume:35 ,  Issue: 19 )

Date of Publication:

16 Sep 1999

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