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A voltage tunable 35 GHz monolithic GaAs FECTED oscillator

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3 Author(s)
Lubke, K. ; Johannes Kepler Univ., Linz, Austria ; Scheiber, H. ; Thim, H.

Monolithically integrated FECTED (field-effect controlled transferred electron device) oscillators have been fabricated with high yield, high reliability, and precise frequency control. With unoptimized circuits, 12 mW with 1.4% efficiency in CW (continuous wave) operation and 25 mW with 2% efficiency in pulsed operation have been obtained. These results represent the highest power output and efficiency yet for monolithic TED and FET oscillator in this frequency range.<>

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:1 ,  Issue: 2 )