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High power CW operation of InGaAsN lasers at 1.3 μm

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6 Author(s)
A. Yu. Egorov ; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia ; D. Bernklau ; D. Livshits ; V. Ustinov
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Room temperature, continuous-wave operation at 1.3 μm is reported for InGaAsN triple quantum well lasers. The layers were grown by MBE using an RF-coupled plasma source for nitrogen. Large broad area lasers exhibit very low threshold current density down to 680 A/cm2 and a slope efficiency of 0.59 W/A (output per two facets). Maximum output powers of 2.4 and 4 W are reached at 10°C under CW and pulsed operation, respectively. These values are a significant improvement over those previously published for lasers in the InGaAsN material system

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Electronics Letters  (Volume:35 ,  Issue: 19 )