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Browse Journals & Magazines > Photonics Technology Letters, ...> Volume:11 Issue:12 Help

High-temperature characteristic in 1.3-/spl mu/m-range highly strained GaInNAs ridge stripe lasers grown by metal-organic chemical vapor deposition

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2 Author(s)
Sato, S. ; Ricoh Co. Ltd., Miyagi, Japan ; Satoh, S.

1.3-/spl mu/m-range highly strained GaInNAs-GaAs double quantum-well ridge stripe lasers with different In contents (37% and 39%) grown by metal-organic chemical vapor deposition are demonstrated. The GaInNAs laser with In content of 37% emitting at 1.294 /spl mu/m exhibited both a low threshold current density of 1.0 kA/cm/sup 2/ at 20/spl deg/C and a high characteristic temperature of 148 K in the temperature range of 20/spl deg/C-80/spl deg/C.

Published in:
Photonics Technology Letters, IEEE  (Volume:11 ,  Issue: 12 )

Date of Publication: Dec. 1999

Page(s):
1560 - 1562
ISSN :
1041-1135
INSPEC Accession Number:
6457705
Digital Object Identifier :
10.1109/68.806846
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Dec. 1999
Sponsored by :
IEEE Photonics Society

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