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High-temperature characteristic in 1.3-μm-range highly strained GaInNAs ridge stripe lasers grown by metal-organic chemical vapor deposition

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2 Author(s)
S. Sato ; Ricoh Co. Ltd., Miyagi, Japan ; S. Satoh

1.3-μm-range highly strained GaInNAs-GaAs double quantum-well ridge stripe lasers with different In contents (37% and 39%) grown by metal-organic chemical vapor deposition are demonstrated. The GaInNAs laser with In content of 37% emitting at 1.294 μm exhibited both a low threshold current density of 1.0 kA/cm2 at 20/spl deg/C and a high characteristic temperature of 148 K in the temperature range of 20/spl deg/C-80/spl deg/C.

Published in:

IEEE Photonics Technology Letters  (Volume:11 ,  Issue: 12 )