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Tunneling time asymmetry in semiconductor heterostructures

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1 Author(s)
D. Dragoman ; Dept. of Phys., Bucharest Univ., Romania

Analytical expressions are given for the difference between left-to-right and right-to-left tunneling times in asymmetric single- and multiple-barrier heterostructures. This tunneling time asymmetry is related to the phase difference of the reflection coefficients of the electron wavefunction for the two tunneling directions. Examples for single- and double-barrier heterostructures are given. The treatment in this paper can be used for designing devices with asymmetric frequency characteristics with respect to the electron tunneling direction

Published in:

IEEE Journal of Quantum Electronics  (Volume:35 ,  Issue: 12 )