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Novel edge suppression technique for planar avalanche photodiodes

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2 Author(s)
J. N. Haralson ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; K. F. Brennan

We present an advanced drift diffusion simulation of the joint opening effect (JOE) avalanche photodiode (APD). The joint opening effect APD is a new design for achieving edge breakdown suppression in planar avalanche photodiodes. It is a single growth process that achieves center breakdown dominance without the use of guard rings, partial charge sheets, or surface etches. The JOE APD only requires the diffusion of the primary well. Edge breakdown suppression is achieved by partially insulating the electric field growth in the active region from the geometry of the primary well

Published in:

IEEE Journal of Quantum Electronics  (Volume:35 ,  Issue: 12 )