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GaSb/InSb/AlGaAsSb heterostructures grown on LiNbO/sub 3/ substrates and their application to highly efficient surface acoustic wave convolver

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6 Author(s)
Kuze, N. ; Asahi Chem. Ind. Co. Ltd., Shizuoka, Japan ; Goto, H. ; Kanno, Y. ; Tsunashima, M.
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Presents for the first time the growth of GaSb/InSb/AlGaAsSb heterostructures on LiNbO/sub 3/ substrates by molecular beam epitaxy and their application to a novel strip-coupled surface acoustic wave (SAW) convolver. High efficiencies of more than -14 dBm have been obtained by using the GaSb/InSb/AlGaAsSb heterostructures and the new electrode design of the SAW convolver. In the spread spectrum communication system, the highly efficient SAW convolver opens up the possibility for a high performance and low power consumption demodulator of the receiver.

Published in:

Device Research Conference Digest, 1999 57th Annual

Date of Conference:

23-23 June 1999