Referenced Items are not available for this document.
35 nm-long metal gate p-MOSFETs with PtSi Schottky source/drain were fabricated on a SIMOX substrate by electron beam lithography and self aligned silicide process and their room temperature operation was demonstrated. The drain current, the transconductance and the on/off ratio were -176 /spl mu/A//spl mu/m, 390 mS/mm and 420, respectively at V/sub DS/=V/sub GS/=-1.5 V. To our knowledge, this is the shortest p-type SOI MOSFET with metal gate.
Published in:
Device Research Conference Digest, 1999 57th Annual
Date of Conference: 23-23 June 1999
- Page(s):
- 30 - 31
- Meeting Date :
- 28 Jun 1999-30 Jun 1999
- Print ISBN:
- 0-7803-5170-3
- INSPEC Accession Number:
- 6521089
- Conference Location :
- Santa Barbara, CA, USA
- Digital Object Identifier :
- 10.1109/DRC.1999.806313
- Product Type:
- Conference Publications
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