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35 nm-long metal gate p-MOSFETs with PtSi Schottky source/drain were fabricated on a SIMOX substrate by electron beam lithography and self aligned silicide process and their room temperature operation was demonstrated. The drain current, the transconductance and the on/off ratio were -176 /spl mu/A//spl mu/m, 390 mS/mm and 420, respectively at V/sub DS/=V/sub GS/=-1.5 V. To our knowledge, this is the shortest p-type SOI MOSFET with metal gate.
Device Research Conference Digest, 1999 57th Annual
Date of Conference: 23-23 June 1999