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Modeling manufacturing yield and reliability

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2 Author(s)
Taeho Kim ; Korea Telecom, Taejon, South Korea ; Way Kuo

In this paper, we introduce the concept of reliability defect, present the time-dependent defect growth model during operations based on a defect-related gate oxide breakdown mechanism, and build the yield-reliability relation model. Discussions presented here can also be applicable to other device failures when different physics-of-failure mechanisms are found. Through the relation model, it is possible to find a minimum level of latent defect screening to assure the required level of reliability and predict reliability for new products when it is combined with a yield prediction model

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:12 ,  Issue: 4 )