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Improvement in hot carrier lifetime as a function of N/sub 2/ ion implantation before gate oxide growth in deep submicron NMOS devices

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4 Author(s)
Guarin, Fernando J. ; Semicond. Res. Dev. Center, IBM Corp., Hopewell Junction, NY, USA ; Rauch, S.E. ; La Rosa, G. ; Brelsford, K.

A detailed study of the impact of N/sub 2/ ion implantation (I/I) dose before gate oxide growth to hot carrier (HC) reliability of NMOSFETs is reported here, Improvements of more than 20/spl times/ in HC lifetime were achieved by the introduction of sufficiently high N/sub 2/ (I/I) doses. It was found that for NMOSFETs, the HC degradation correlates inversely to the initial interface state density introduced by the N/sub 2/ I/I process. This process-driven HC lifetime improvement does not require extensive post-metal anneals for HC lifetime improvements in advanced CMOS multilevel metal-dielectric processes.

Published in:

Electron Device Letters, IEEE  (Volume:20 ,  Issue: 12 )

Date of Publication:

Dec. 1999

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