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A high gain, low power MMIC LNA for Ka-band using InP HEMTs

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8 Author(s)

Compact Ka-Band MMIC low noise amplifiers have been developed with high gain, low VSWR and low power dissipation using 0.12 μm InP HEMT technology. A five stage single-ended LNA achieved 40 dB of gain and a 1.4 dB average noise figure over the 27-30 GHz band with an input return loss in excess of 15 dB. The 3×1 mm2 MMIC consumes less than 40 milliwatts of dc power

Published in:

Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE

Date of Conference:

1999