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Transferred InP-based HBVs on glass substrate

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3 Author(s)
Arscott, S. ; Inst. d''Electron. et de Microelectron. du Nord, Univ. des Sci. et Technol. de Lille, Villeneuve d''Ascq, France ; Mounaix, P. ; Lippens, D.

Transferred-substrate InP-based heterostructure barrier varactor devices are reported which have been fabricated on glass substrate following a novel epitaxial layer transfer technique utilising the negative photoresist SU-8. The transferred devices exhibit a leakage current of 4.5 A/cm2 at 10 V, a zero-bias capacitance of 1 fF/μm2 and a capacitance ratio of 5:1

Published in:

Electronics Letters  (Volume:35 ,  Issue: 17 )

Date of Publication:

19 Aug 1999

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