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High-power mid-IR type II quantum-well lasers grown on compliant universal substrate [InGaAs/InP]

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5 Author(s)
Kuo, C.H. ; Appl. Optoelectron. Inc., Sugar Land, TX, USA ; Lin, Chih-Hsiang ; Thang, C.H. ; Pei, S.S.
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High-power mid-infra-red type II quantum-well lasers directly grown on compliant universal substrate with a lasing wavelength of 3.9 μm at 80 K have been realised. A peak output power of >320 mW per facet and differential quantum efficiency (DQE) of 7.2% are observed

Published in:

Electronics Letters  (Volume:35 ,  Issue: 17 )