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Non-volatile memory device with true CMOS compatibility

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6 Author(s)
Chang, L. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Kuo, C. ; Chenming Hu ; Kalnitsky, A.
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A low-cost non-volatile memory device using a standard CMOS process without additional processing steps is investigated for embedded applications. The cell consists of a PMOS transistor in which no electrical contact is made to the gate electrode and a series NMOS access transistor. Experimental data show that sufficient read current and disturb lifetime can be achieved. Data retention characteristics are also examined

Published in:

Electronics Letters  (Volume:35 ,  Issue: 17 )