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BiCMOS6G: a high performance 0.35 μm SiGe BiCMOS technology for wireless applications

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9 Author(s)
A. Monroy ; Centre Commun. CNET, Crolles, France ; W. Laurens ; M. Marty ; D. Dutartre
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BiCMOS6G, a 200 mm 0.35 μm SiGe BiCMOS technology, is presented. This technology features a low complexity double-poly SiGe HBT with 60 GHz fmax, added to stand-alone CMOS and high-quality passive components. It is ideally suited to the development of highly integrated wireless communications circuits

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999

Date of Conference:

1999