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An improved transmission-line model for MOS transistors

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2 Author(s)
Abou-Allam, E. ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada ; Manku, T.

In this paper, we present a high-frequency small-signal model for MOSFET devices operating in the saturation regime. The model is based on a transmission-line treatment of the gate region, taking into account the distributed resistance-capacitance effects along the width of the device. The gate-source resistance, as well as the induced gate noise arising from the nonquasi-static operation, are included in the model. Closed-form solution of the noise and the y-parameters are obtained. The model is verified with measurements of an 0.8-μm device. The y-parameters model is in close agreement with the measured parameters up to 15 GHz, which is higher than the fT of the device. The noise model was also verified by comparing the modeled and measured noise resistance

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Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on  (Volume:46 ,  Issue: 11 )