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Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

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16 Author(s)
Zhukov, A.E. ; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia ; Kovsh, A.R. ; Ustinov, V.M. ; Shernyakov, Yu.M.
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Continuous-wave operation near 1.3 μm or a diode laser based on self-organized quantum dots (QD's) on a GaAs substrate is demonstrated. Multiple stacking of InAs QD planes covered by thin InGaAs layers allows us to prevent gain saturation and achieve long-wavelength lasing with low threshold current density (90-105 A/cm2) and high output power (2.7 W) at 17/spl deg/C heatsink temperature. It is thus confirmed that QD lasers of this kind are potential candidates to substitute InP-based lasers in optical fiber systems.

Published in:

Photonics Technology Letters, IEEE  (Volume:11 ,  Issue: 11 )