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A 0.25-μm, 600-MHz, 1.5-V, fully depleted SOI CMOS 64-bit microprocessor

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8 Author(s)
Sung Bae Park ; Samsung Electron. Co., Kyungki, South Korea ; Young Wug Kim ; Young Gun Ko ; Kwang Il Kim
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A 0.25-μm, four-layer-metal, 1.5-V, 600-MHz, fully depleted (FD) silicon-on-insulator (SOI) CMOS 64-bit ALPHA1 microprocessor integrating 9.66 million transistors on a 209-mm2 silicon die has been developed leveraging the existing bulk design. FD-SOI technology is used because it has better immunity for dynamic leakage current than partially depleted SOI in high speed dynamic circuits without body contact. C-V characteristics of metal-oxide-silicon-oxide-silicon with and without source-drain junctions are described to explain the behavior of FD-SOI transistor. Race, speed, and dynamic stability have been simulated to reassure the circuit operation. Key process features are shallow trench isolation, 4-nm gate oxide, 30-nm co-silicide, 46-nm silicon film, and 200-nm buried oxide. The FD-SOI microprocessor runs 30% faster than that of bulk, and it passes the reliability and system test

Published in:

IEEE Journal of Solid-State Circuits  (Volume:34 ,  Issue: 11 )