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Behavioral models for noise in bipolar and MOSFET mixers

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2 Author(s)
Yutao Hu ; Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA ; Mayaram, K.

Frequency-domain behavioral models for noise in both bipolar and MOSFET mixers are presented. These models are developed from a linear time-varying analysis for mixer noise. No simulations are required as in the conventional approach, hence these models are very efficient. Good agreement is obtained between the behavioral models and the results from the simulation based approaches over a range of frequencies and processes. The limitations of the models have been identified and some improvements are suggested

Published in:

Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on  (Volume:46 ,  Issue: 10 )

Date of Publication:

Oct 1999

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