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Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N/sub 2/O oxidation of NH/sub 3/-nitrided Si

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8 Author(s)
Song, S.C. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Luan, H.F. ; Lee, C.H. ; Mao, A.Y.
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In this paper, we report ultra thin high quality nitride/oxide gate dielectrics prepared by rapid thermal NH/sub 3/ nitridation of Si followed by in-situ N/sub 2/O oxidation (NH/sub 3/+N/sub 2/O process). These films show excellent interface properties, significantly lower leakage current (/spl sim/10/sup 2//spl times/), enhanced reliability, and superior boron diffusion barrier properties compared with SiO/sub 2/ of identical thickness.

Published in:

VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on

Date of Conference:

14-16 June 1999