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This paper proposes a "new radical injection" (selective radical generation) method for high-performance SiO/sub 2/ patterning using nonperfluorocarbon gases (CF/sub 3/I and C/sub 2/F/sub 4/) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF/sub 2/ and CF/sub 3/ radicals. Thus it accomplishes both a high etching rate and high etching selectivity during SiO/sub 2/ contact-hole formation. The gas chemistries can also suppress charge-up damage during SiO/sub 2/ etching because a low electron temperature is maintained in the plasma.