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A 0.18 /spl mu/m high-performance logic technology

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26 Author(s)
Crowder, S. ; IBM Semicond. Res. & Dev Center, Hopewell Junction, NY, USA ; Greco, S. ; Ng, H. ; Barth, E.
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In this paper, we describe a high-performance 0.18 /spl mu/m logic technology with dual damascene copper metallization and dense SRAM memory. Local interconnect technology allows us to fabricate SRAM cells as small as 3.84 /spl mu/m/sup 2/. We demonstrate that copper metallization continues to exhibit performance advantages over aluminum-based technologies in this generation.

Published in:

VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on

Date of Conference:

14-16 June 1999