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Quantum effect in oxide thickness determination from capacitance measurement

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3 Author(s)
Yang, K. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Ya-Chin King ; Chenming Hu

Simple quantitative models of charge displacement due to the quantum effect and its influence on gate oxide thickness measurements are presented. An effective oxide thickness (T/sub DC/) is introduced which is relevant to MOSFET current modeling. Physical oxide thickness and T/sub DC/ can be extracted easily from capacitance measurement, and the electrical thickness can be predicted from a target physical thickness using these new models.

Published in:

VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on

Date of Conference:

14-16 June 1999