Referenced Items are not available for this document.
It is demonstrated that low temperature activation of the source/drain impurities, induced by the re-crystallization of an amorphous substrate layer, is effective for realization of scaled CMOS with abrupt junction profiles. Physical 50 nm gate length pFETs with high drive current and good short channel behaviour were obtained.
Published in:
VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Date of Conference: 14-16 June 1999
- Page(s):
- 9 - 10
- Meeting Date :
- 14 Jun 1999-16 Jun 1999
- Print ISBN:
- 4-930813-93-X
- INSPEC Accession Number:
- 6490076
- Conference Location :
- Kyoto, Japan
- Digital Object Identifier :
- 10.1109/VLSIT.1999.799314
- Product Type:
- Conference Publications
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