System Maintenance:
There may be intermittent impact on performance while updates are in progress. We apologize for the inconvenience.
By Topic

A FEM-MD combination method for silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Izumi, Satoshi ; Res. & Dev. Center, Toshiba Corp., Japan ; Kawakami, T. ; Sakai, S.

A new method combining the finite element method (FEM) and the molecular dynamics (MD) for silicon is proposed. For simultaneous simulation, the patch model was used to exchange displacement information in both directions. A one-to-one correspondence of atoms and nodes is impossible for silicon lattice, therefore the atom was embedded in isoparametric element. The influence of internal displacement which is the additional displacement to the continuum one was taken into consideration. Martin's method was applied to calculate internal displacement and elastic constants. The verification model showed that the smooth transition of displacement and stress was realized in the boundary region of FEM and MD. These value showed good agreement with elastic solution

Published in:

Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on

Date of Conference:

1999