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3-dimensional process simulation of rapid thermal annealing using a five species point defects diffusion model

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5 Author(s)
Herbaux, J. ; IEMN-ISEN, Villenneuve d''Ascq, France ; Senez, Vincent ; Hoffmann, T. ; Bossut, R.
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This paper reports the implementation of a five species point defects diffusion model in three dimensions and the various numerical issues associated with it. The results obtained for a 3-dimensional simulation of a rapid thermal annealing step involved in the manufacturing of a MOS transistor are presented

Published in:
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on

Date of Conference: 1999

Page(s):
59 - 62
Meeting Date :
06 Sep 1999-08 Sep 1999
Print ISBN:
4-930813-98-0
INSPEC Accession Number:
6512724
Conference Location :
Kyoto
Digital Object Identifier :
10.1109/SISPAD.1999.799259
Product Type:
Conference Publications

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