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A compact double-gate MOSFET model comprising quantum-mechanical and non-static effects

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2 Author(s)
Baccarani, G. ; Dipt. di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy ; Reggiani, S.

A compact model for the double-gate MOSFET (DG-MOSFET) which fully accounts for quantum mechanical effects, including motion quantization normal to the Si-SiO2 interface, band splitting into subbands and non-static effects in the transport model, is worked out. The model holds both in subthreshold and strong inversion, and ensures a smooth transition between the two regions. A simplified energy-balance transport model is worked out which allows us to compare the drain-current calculations with Monte Carlo data

Published in:

Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on

Date of Conference:

1999